Institute Lecture by Professor Jagdish (Jay) Narayan

Professor Jagdish (Jay) Narayan is the John C. Fan Family Distinguished Chair in Materials Science and Engineering Department of North Carolina State University. He received his B. Tech from IIT Kanpur in 1969 and MS (1970) and PhD (1971) from UC Berkeley in a record time of two years. He is internationally known for his pioneering contributions in laser annealing and pulsed laser deposition, defects and interfaces, domain matching epitaxy for novel thin film heterostructures across the misfit scale, and creation of new of materials with unique properties. Prof Narayan’s most recent research pertains to the discovery of Q-carbon and Q-BN and direct conversion of carbon into diamond and h-BN into c-BN at ambient temperatures and pressures in air. Prof. Narayan's company, Q-Carbon, LLC, has been declared Winner of 2017 R&D-100 Award for the Most Significant Tech Innovation. In an interview with Vanita Srivastava he talks about his research on new phase of Q-carbon and more.

What is your team currently researching on? Please explain the concept of boron doped Q-carbon material for superconductivity.


We are doing research on new phase of Q-carbon which is harder than diamond and it is highly emissive, providing an ideal platform for display devices. We are creating efficient diamond p-n junctions for next-generation high-power and high-frequency devices, realizing the dream of smart grid power-highway, paralleling the internet of information highway. Pure Q-carbon is ferromagnetic and it turns into a high-temperature superconductor upon doping with boron. With a record transition temperature of 57K, with 27% atomic concentration, this discovery heralds a major breakthrough in conventional high-temperature superconductivity, which is needed for applications ranging from no-loss power transmission to atomic sensors and quantum computing. Our current focus is to enhance superconducting transition temperature to 100K and higher by increasing the boron concentration to 50%, which has been already synthesized.


Please explain your work on work on multiferroic materials that can pave way for new electronic memory devices.


By introducing stable defects in a controlled way, we are creating reliable mutiferroic materials for novel solid state devices.


Can you briefly explain your invention on the integrated smart sensors and 3-D self-assembled nano-structures.


Through our invention of domain matching epitaxy, we are integrating layered and 3-D self-assembled nano-structures of functional materials on a silicon microchip to create smart devices. These smart devices will have sensing, manipulation and response functions, all integrated on a chip.


You have also pioneered the concept of solute trapping in semiconductors. What is solute trapping and how does it help?


Through this invention, we can put active carriers more than allowed by equilibrium thermodynamics. This concept is needed for all of the solid state devices, particularly as the feature size is shrinking, going to nano-scale dimensions.


How important is nanotechnology in the current times?


Nanotechnology is critical to quality of life for humanity. As the critical materials are being depleted from planet Earth, we must do more with less of materials and make nano-systems more efficient. This is also key to improving as well as maintaining the quality of life.